STL36DN6F7 Series

Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package

Catalog

Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
STMicroelectronics STL36DN6F7	-55 °C	175 ░C	PowerFlat™ (5x6)	8 nC	4 V	33 A	8-PowerVDFN	Surface Mount	60 V	2 N-Channel (Dual)	420 pF	MOSFET (Metal Oxide)	58 W	27 mOhm
STMicroelectronics STL36N60M6	-55 °C	150 °C	PowerFlat™ (8x8) HV	44.3 nC	4.75 V	25 A	8-PowerVDFN	Surface Mount	600 V			MOSFET (Metal Oxide)			1960 pF	25 V	10 V	N-Channel

Catalog

Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.