Beta
⌘K
IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 3.4 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 195 nC | 300 W | 3.4 mOhm | 4 V | 75 A | 20 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | TO-220AB | 10 V | 6600 pF | TO-220-3 | 60 V | Through Hole |