DMG7N65SJ3 Series

N-CHANNEL ENHANCEMENT MODE MOSFET

Catalog

N-CHANNEL ENHANCEMENT MODE MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMG7N65SJ3	25 nC	Automotive	N-Channel	Through Hole	1.4 Ohm	AEC-Q101	30 V	-55 °C	150 °C	5.5 A	MOSFET (Metal Oxide)	886 pF	125 W	4 V	IPAK TO-251-3 Short Leads TO-251AA	650 V	10 V

Catalog

N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

• Low On-Resistance

• High BVDSS Rating for Power Application

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.