IC DRAM 1GBIT LVSTL 100VFBGA
Part | Memory Organization | Access Time | Clock Frequency | Memory Type | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Memory Interface | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Technology | Supplier Device Package [x] | Supplier Device Package [y] | Supplier Device Package | Write Cycle Time - Word, Page |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W66AQ6NBHAGJ TR | 64 M | 3.6 ns | 1.867 GHz | Volatile | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 100-VFBGA | LVSTL_06 | DRAM | 105 °C | -40 °C | 1 Mbit | SDRAM - Mobile LPDDR4X | 10 | 7.5 | 100-VFBGA | 18 ns |
Winbond Electronics W66AQ6NBQAGJ | 64 M | 3.6 ns | 1.867 GHz | Volatile | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-TFBGA | LVSTL_06 | DRAM | 105 °C | -40 °C | 1 Mbit | SDRAM - Mobile LPDDR4X | 10 | 14.5 | 200-TFBGA | 18 ns |
Winbond Electronics W66AQ6NBHAHJ | 64 M | 3.6 ns | 2.133 GHz | Volatile | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 100-VFBGA | LVSTL_06 | DRAM | 105 °C | -40 °C | 1 Mbit | SDRAM - Mobile LPDDR4X | 10 | 7.5 | 100-VFBGA | 18 ns |
Winbond Electronics W66AQ6NBHAFJ TR | 64 M | 3.6 ns | 1.6 GHz | Volatile | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 100-VFBGA | LVSTL_06 | DRAM | 105 °C | -40 °C | 1 Mbit | SDRAM - Mobile LPDDR4X | 10 | 7.5 | 100-VFBGA | 18 ns |
Winbond Electronics W66AQ6NBQAHJ | 64 M | 3.6 ns | 2.133 GHz | Volatile | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-TFBGA | LVSTL_06 | DRAM | 105 °C | -40 °C | 1 Mbit | SDRAM - Mobile LPDDR4X | 10 | 14.5 | 200-TFBGA | 18 ns |