MSRTA50060 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 600V 500A 3TOWER
| Part | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Current - Average Rectified (Io) (per Diode) | Package Name | Mounting Type | Technology | Diode Pair Count | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | ||||||||||||||||
GeneSiC Semiconductor | Three Tower | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 150 °C | -55 °C | 1.2 V | 600 V | 25 µA | 500 A | Three Tower | Chassis Mount | Standard | 1 pair | Common Cathode |