POWER MOSFET, N CHANNEL, 100 V, 40 A, 0.0195 OHM, PG-TSDSON, SURFACE MOUNT
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | 7.2 A 40 A | 4 V | MOSFET (Metal Oxide) | 78 W | -55 °C | 150 °C | 17 nC | 8-PowerTDFN | 10 V | 20 V | Surface Mount | 1100 pF | N-Channel | PG-TDSON-8-1 | 25.2 mOhm |