TO-247-3 GAN TRANSISTORS(GAN HEMT) ROHS
| Part | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Transphorm TP65H035G4WS | GaNFET (Cascode Gallium Nitride FET) | Through Hole | 10 V | -55 °C | 150 °C | 46.5 A | N-Channel | 650 V | 1500 pF | 22 nC | 156 W | 20 V | 4.8 V | TO-247-3 | TO-247-3 | 41 mOhm |