IPP065N Series

Catalog

MOSFET N-CH 40V 50A TO220-3

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IPP065N04N G	34 nC	-55 °C	175 ░C	4 V	6.5 mOhm	50 A	68 W	20 V	Through Hole	40 V	2800 pF	PG-TO220-3	MOSFET (Metal Oxide)	TO-220-3	10 V	N-Channel
Infineon Technologies IPP065N06LGAKSA1		-55 °C	175 ░C	2 V	6.5 mOhm			20 V	Through Hole	60 V	5100 pF	PG-TO220-3-1	MOSFET (Metal Oxide)	TO-220-3	4.5 V 10 V	N-Channel	157 nC	250 W