GC50MPS12 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.2KV 212A TO247
| Part | Current - Reverse Leakage | Reverse Recovery Time (trr) | Technology | Package Name | Package / Case | Mounting Type | Capacitance | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 40 µA | 0 ns | SiC (Silicon Carbide) Schottky | TO-247-2 | TO-247-2 | Through Hole | 3263 pF | 175 °C | -55 °C | 1.8 V | 1200 V | 212 A | |||
GeneSiC Semiconductor | 40 µA | 0 ns | SiC (Silicon Carbide) Schottky | TO-247-2 | TO-247-2 | Through Hole | 3263 pF | 175 °C | -55 °C | 1.8 V | 1200 V | 212 A | 500 mA | No Recovery Time | 500 mA 500 mA |