IC FLASH 16MBIT SPI/QUAD 8SOP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Memory Format | Memory Organization | Package / Case | Package / Case [y] | Package / Case [x] | Memory Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Clock Frequency | Access Time | Memory Interface | Memory Size | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH - NOR (SLC)  | FLASH  | 2 M  | 8-SOIC  | 3.9 mm  | 0.154 in  | Non-Volatile  | 140 µs  | 4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 133 MHz  | 7 ns  | SPI - Quad I/O  | 16 Mb  | 8-SOP  | 
GigaDevice Semiconductor (HK) Limited  | 125 °C  | -40 °C  | FLASH - NOR (SLC)  | FLASH  | 2 M  | 8-SOIC  | 3.9 mm  | 0.154 in  | Non-Volatile  | 140 µs  | 4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 133 MHz  | 7 ns  | SPI - Quad I/O  | 16 Mb  | 8-SOP  | 
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH - NOR  | FLASH  | 2 M  | 8-UDFN Exposed Pad  | Non-Volatile  | 50 µs  | 2.4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 120 MHz  | SPI - Quad I/O  | 16 Mb  | 8-USON (4x3)  | |||
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH - NOR  | FLASH  | 2 M  | 8-WDFN Exposed Pad  | Non-Volatile  | 50 µs  | 2.4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 120 MHz  | SPI - Quad I/O  | 16 Mb  | 8-WSON (5x6)  | |||
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH - NOR (SLC)  | FLASH  | 2 M  | 8-XDFN Exposed Pad  | Non-Volatile  | 70 µs  | 2 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 133 MHz  | 7 ns  | SPI - Quad I/O  | 16 Mb  | 8-USON (4x4)  | ||
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH - NOR  | FLASH  | 2 M  | 8-SOIC  | 5.3 mm  | 0.209 "  | Non-Volatile  | 50 µs  | 2.4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 120 MHz  | SPI - Quad I/O  | 16 Mb  | 8-SOP  | |
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH - NOR  | FLASH  | 2 M  | 8-SOIC  | 3.9 mm  | 0.154 in  | Non-Volatile  | 50 µs  | 2.4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 120 MHz  | SPI - Quad I/O  | 16 Mb  | 8-SOP  | |
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH - NOR (SLC)  | FLASH  | 2 M  | 8-XFDFN Exposed Pad  | Non-Volatile  | 140 µs  | 4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 133 MHz  | 7 ns  | SPI - Quad I/O  | 16 Mb  | 8-USON (3x2)  | ||
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH - NOR  | FLASH  | 2 M  | 8-SOIC  | 5.3 mm  | 0.209 "  | Non-Volatile  | 50 µs  | 2.4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 120 MHz  | SPI - Quad I/O  | 16 Mb  | 8-SOP  | |
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH - NOR (SLC)  | FLASH  | 2 M  | 8-SOIC  | 5.3 mm  | 0.209 "  | Non-Volatile  | 140 µs  | 4 ms  | Surface Mount  | 2.7 V  | 3.6 V  | 133 MHz  | 7 ns  | SPI - Quad I/O  | 16 Mb  | 8-SOP  |