DIODE GEN PURP 800V 10A DO214AB
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Package / Case | Mounting Type | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Speed | Speed | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 1.1 V | 10 A | DO-214AB SMC | Surface Mount | DO-214AB (SMC) | 1 µA | 800 V | 60 pF | Standard Recovery >500ns | 200 mA | Standard |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 A | DO-214AB SMC | Surface Mount | DO-214AB (SMC) | 1 µA | 800 V | 60 pF | Standard Recovery >500ns | 200 mA | Standard |