APTC60 Series

600V/Full bridge + series FRED and SiC parallel diodes

Catalog

600V/Full bridge + series FRED and SiC parallel diodes

Part	Rds On (Max)	Power - Max	Technology	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Mounting Type	Current - Continuous Drain (Id)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)
Microchip Technology APTC60VDAM24T3G	24 mOhm	462 W	MOSFET (Metal Oxide)	300 nC	2	N-Channel	Dual	Chassis Mount	95 A	14400 pF	600 V	3.9 V	SP3	-40 °C	150 °C	SP3
Microchip Technology APTC60TAM21SCTPAG	21 mOhm	625 W	MOSFET (Metal Oxide)	580 nC	6	N-Channel	3-Phase Bridge	Chassis Mount	116 A	13000 pF	600 V	3.6 V	Module	-40 °C	150 °C	SP6-P
Microchip Technology APTC60DDAM35T3G	35 mOhm	416 W	MOSFET (Metal Oxide)	518 nC	2	N-Channel	Dual	Chassis Mount	72 A	14000 pF	600 V	3.9 V	SP3	-40 °C	150 °C	SP3
Microchip Technology APTC60TAM35PG	35 mOhm	416 W	MOSFET (Metal Oxide)	518 nC	6	N-Channel	3-Phase Bridge	Chassis Mount	72 A	14000 pF	600 V	3.9 V	SP6	-40 °C	150 °C	SP6-P
Microchip Technology APTC60AM35T1G	35 mOhm	416 W	MOSFET (Metal Oxide)	518 nC	2	N-Channel	Half Bridge	Chassis Mount	72 A	14000 pF	600 V	3.9 V	SP1	-40 °C	150 °C	SP1
Microchip Technology APTC60SKM24CT1G	24 mOhm		MOSFET (Metal Oxide)	300 nC				Chassis Mount		14400 pF	600 V	3.9 V	SP1	-40 °C	150 °C	SP1	10 V	N-Channel	20 V	95 A	462 W
Microchip Technology APTC60HM35T3G	35 mOhm	416 W	MOSFET (Metal Oxide)	518 nC	4	N-Channel	Full Bridge	Chassis Mount	72 A	14000 pF	600 V	3.9 V	SP3	-40 °C	150 °C	SP3
Microchip Technology APTC60AM45B1G	0.045 Ohm	250 VA	MOSFET (Metal Oxide)	150 nC	3	N Channel	Boost Chopper Phase Leg	Chassis Mount	49 A	7200 pF	600 V	3.9 V	SP1	-40 °C	150 °C	SP1
Microchip Technology APTC60TDUM35PG	35 mOhm	416 W	MOSFET (Metal Oxide)	518 nC	6	N-Channel	3-Phase Bridge	Chassis Mount	72 A	14000 pF	600 V	3.9 V	SP6	-40 °C	150 °C	SP6-P
Microchip Technology APTC60SKM24T1G	24 mOhm		MOSFET (Metal Oxide)	300 nC				Chassis Mount		14400 pF	600 V	3.9 V	SP1	-40 °C	150 °C	SP1	10 V	N-Channel	20 V	95 A	462 W

Catalog

600V/Full bridge + series FRED and SiC parallel diodes

Description

* Super junction MOSFET * Ultra low RDSon * Low Miller capacitance * Ultra low gate charge * Avalanche energy rated * FRED Si diode * Ultra fast recovery times * Soft recovery characteristics * High blocking voltage * High current * Low leakage current * Low stray inductance * Kelvin source for easy drive * Low stray inductance * Internal thermistor for temperature monitoring (optional) * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant