1N8033 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARB 650V 4.3A TO276
| Part | Current - Average Rectified (Io) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Reverse Recovery Time (trr) | Mounting Type | Voltage - Forward (Vf) (Max) | Technology | Current - Reverse Leakage | Capacitance | Package Name | Voltage - DC Reverse (Vr) (Max) | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 4.3 A | 250 °C | -55 °C | 0 ns | Surface Mount | 1.65 V | SiC (Silicon Carbide) Schottky | 5 µA | 274 pF | TO-276 | 650 V | TO-276AA | |||
GeneSiC Semiconductor | 4.3 A | 250 °C | -55 °C | 0 ns | Surface Mount | 1.65 V | SiC (Silicon Carbide) Schottky | 5 µA | 274 pF | TO-276 | 650 V | TO-276AA | 500 mA | No Recovery Time | 500 mA 500 mA |