BSS123Q Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Technology	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Grade	Qualification
Diodes Inc BSS123K-13	MOSFET (Metal Oxide)	SOT-23-3	500 mW	38 pF	1.3 nC	2 V	Surface Mount	N-Channel	6 Ohm	4.5 V 10 V	230 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V
Diodes Inc BSS123-7-F	MOSFET (Metal Oxide)	SOT-23-3	300 mW	60 pF		2 V	Surface Mount	N-Channel	6 Ohm	10 V	170 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V
Diodes Inc BSS123W-7-F	MOSFET (Metal Oxide)	SOT-323		60 pF		2 V	Surface Mount	N-Channel	6 Ohm	4.5 V 10 V	170 mA	SC-70 SOT-323	-55 °C	150 °C	20 V	100 V	200 mW
Diodes Inc BSS123TA	MOSFET (Metal Oxide)	SOT-23-3		20 pF		2 V	Surface Mount	N-Channel		4.5 V 10 V	170 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V	360 mW	6 Ohm
Diodes Inc BSS123Q-7	MOSFET (Metal Oxide)	SOT-23-3	300 mW	60 pF		2 V	Surface Mount	N-Channel	6 Ohm	4.5 V 10 V	170 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V			Automotive	AEC-Q101

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• High Drain-Source Voltage Rating

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact us or your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.