DMNH6065SSDQ Series

60V Dual N-Channel Enhancement Mode MOSFET

Catalog

60V Dual N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Power - Max [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	Grade
Diodes Inc DMNH6065SSD-13	8-SO	1.5 W	Surface Mount	60 V	2 N-Channel (Dual)	3 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	-55 °C	175 ░C	3.8 A	65 mOhm	11.3 nC
Diodes Inc DMNH6065SSDQ-13	8-SO	1.5 W	Surface Mount	60 V	2 N-Channel (Dual)	3 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	-55 °C	175 ░C	3.8 A	65 mOhm	11.3 nC	AEC-Q101	Automotive

Catalog

60V Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C– Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), please referto the related automotive grade (Q-suffix) part. A listing canbe found athttps://www.diodes.com/products/automotive

• This part is qualified to JEDEC standards (as references inAEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

• An Automotive-Compliant Part is Available Under SeparateDatasheet (DMNH6065SSDQ)

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.