Beta
⌘K
MOSFET N-CH 120V 56A TO262-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V 49 nC | MOSFET (Metal Oxide) | PG-TO262-3 | 14.7 mOhm | 20 V | 120 V | N-Channel | 4 V | 107 W | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 175 ░C | 56 A | Through Hole | 10 V | 3220 pF |