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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 600 mW | 20 V | 4.5 V 10 V | 50 V | Surface Mount | 40 pF | MOSFET (Metal Oxide) | 0.8 nC | SOT-23-3 | -55 °C | 150 °C | N-Channel | 1.5 V | 1.8 Ohm | SC-59 SOT-23-3 TO-236-3 | 500 mA |