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INFINEON’S IPP80N04S4L-04 IS A 40V MOSFET WITH LOWEST RDS(ON), AEC-Q101 QUALIFIED, 175°C OPERATING TEMP, IDEAL FOR AUTOMOTIVE APPLICATIONS. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
| Part | Supplier Device Package | Power Dissipation (Max) | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO220-3-1 | 71 W | TO-220-3 | Through Hole | 4690 pF | MOSFET (Metal Oxide) | 4.5 V 10 V | 2.2 V | -16 V 20 V | 40 V | -55 °C | 175 ░C | 60 nC | N-Channel | 4.3 mOhm | |
Infineon Technologies | PG-TO220-3-1 | 94 W | TO-220-3 | Through Hole | 5260 pF | MOSFET (Metal Oxide) | 10 V | 4 V | 20 V | 40 V | -55 °C | 175 ░C | N-Channel | 3.7 mOhm | 66 nC |