DMTH4M90SPSWQ Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Diodes Inc DMTH4M90SPSWQ-13	Automotive	-55 °C	175 ░C	8-PowerTDFN	Surface Mount Wettable Flank	4 V	278 A	N-Channel	MOSFET (Metal Oxide)	40 V	115 nC	0.9 mOhm	10 V	20 V	AEC-Q101	9434 pF	PowerDI5060-8 (Type UX)

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Wettable Flank for Improved Optical Inspection

• Low RDS(ON)– Minimizes On-State Losses

• < 1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH4M90SPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.