NVTFS020N06C Series

Power MOSFET, Single, N-Channel, µ8FL, 60 V, 20.3 mΩ, 27 A

Catalog

Power MOSFET, Single, N-Channel, µ8FL, 60 V, 20.3 mΩ, 27 A

Part	Grade	Power Dissipation (Max)	Qualification	Rds On (Max)	Drain to Source Voltage (Vdss)	Package Width	Package Name	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Vgs(th) (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	FET Type	Package / Case	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NVTFWS020N06CTAG	Automotive	2.5 W 31 W	AEC-Q101	20.3 mOhm	60 V	3.3 mm	8-WDFN	3.3 mm	-55 °C	175 °C	20 V	4 V	Surface Mount	MOSFET (Metal Oxide)	27 A	7 A	N-Channel	8-PowerWDFN	5.8 nC	355 pF	10 V
ON Semiconductor NVTFS020N06CTAG	Automotive	2.5 W 31 W	AEC-Q101	20.3 mOhm	60 V	3.3 mm	8-WDFN	3.3 mm	-55 °C	175 °C	20 V	4 V	Surface Mount	MOSFET (Metal Oxide)	27 A	7 A	N-Channel	8-PowerWDFN	5.8 nC	355 pF	10 V

Catalog

Power MOSFET, Single, N-Channel, µ8FL, 60 V, 20.3 mΩ, 27 A

Key Features

• Small Footprint (3.3 x 3.3 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVTFWS020N06C − Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 3.3 x 3.3 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.