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DIODE SIL CARBIDE 650V 8A VSON-4
| Part | Current - Average Rectified (Io) | Technology | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8 A | SiC (Silicon Carbide) Schottky | No Recovery Time | 140 µA | 650 V | 250 pF | PG-VSON-4 | 150 °C | -55 °C | 1.7 V | 0 ns | 4-PowerTSFN | Surface Mount |