DMG3414UQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	FET Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Qualification	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Grade
Diodes Inc DMG3414UQ-13	25 mOhm	N-Channel	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	1.8 V 4.5 V	4.2 A	8 V	20 V	900 mV	780 mW	829.9 pF	Surface Mount	AEC-Q101	9.6 nC	SOT-23-3	-55 °C	150 °C	Automotive

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMG3414UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.