Catalog
20 V, 2 A P-channel Trench MOSFET
20 V, 2 A P-channel Trench MOSFET
20 V, 2 A P-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Qualification | Grade | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia NX2301P,215 | 120 mOhm | 2.8 W, 400 mW | 8 V | 380 pF | TO-236AB | 1.1 V | P-Channel | 1.8 V, 4.5 V | 2 A | 150 °C | 6 nC | 20 V | SC-59, SOT-23-3, TO-236-3 | AEC-Q101 | Automotive | Surface Mount | MOSFET (Metal Oxide) |