MOSFET N/P-CH 30V 6.8A/4.6A 8SO
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Configuration | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 27 mOhm | Surface Mount | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | 4.6 A 6.8 A | N and P-Channel | 14 nC | 30 V | 2.3 V | MOSFET (Metal Oxide) | Logic Level Gate | 398 pF | 2 W | -55 °C | 150 °C |
Infineon Technologies | 27 mOhm | Surface Mount | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | 4.6 A 6.8 A | N and P-Channel | 14 nC | 30 V | 2.3 V | MOSFET (Metal Oxide) | Logic Level Gate | 398 pF | 2 W | -55 °C | 150 °C |