GC08MPS12 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARB 1.2KV 43A TO220-2
| Part | Current - Average Rectified (Io) | Technology | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Mounting Type | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Package Name | Current - Reverse Leakage | Reverse Recovery Time (trr) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package / Case | Capacitance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 43 A | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 1.8 V | 1200 V | TO-220-2 | 7 µA | 0 ns | 175 °C | -55 °C | TO-220-2 | 545 pF |
GeneSiC Semiconductor | 43 A | SiC (Silicon Carbide) Schottky | Through Hole | 1.8 V | 1200 V | TO-220-2 | 7 µA | 0 ns | 175 °C | -55 °C | TO-220-2 | 545 pF | |||
 GeneSiC Semiconductor | 40 A | SiC (Silicon Carbide) Schottky | Surface Mount | 1.8 V | 1200 V | TO-252-2 | 7 µA | 0 ns | 175 °C | -55 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 545 pF | |||
GeneSiC Semiconductor | 40 A | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | Surface Mount | 1.8 V | 1200 V | TO-252-2 | 7 µA | 0 ns | 175 °C | -55 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 545 pF |