IPI60R Series

Catalog

MOSFET N-CH 650V 12A TO262-3

Part	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPI60R250CPAKSA1	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	35 nC	N-Channel	10 V	PG-TO262-3	-55 °C	150 °C	12 A	1200 pF	Through Hole	650 V	20 V	3.5 V	104 W	250 mOhm
Infineon Technologies IPI60R600CPAKSA1	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	27 nC	N-Channel	10 V	PG-TO262-3	-55 °C	150 °C	6.1 A		Through Hole	600 V	20 V	3.5 V	60 W	600 mOhm	550 pF