SI4834 Series
Manufacturer: Vishay Dale
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Input Capacitance (Ciss) (Max) | Technology | Gate Charge (Max) | Current - Continuous Drain (Id) | Vgs(th) (Max) | Rds On (Max) | Power - Max | Channel Count | Configuration | Configuration - Features | Package Length | Package Width | Drain to Source Voltage (Vdss) | Mounting Type | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay Dale | -55 °C | 150 °C | 8-SOIC | 950 pF | MOSFET (Metal Oxide) | 25 nC | 8 A | 3 V | 20 mOhm | 2.9 W | 2 | N-Channel | Dual | 0.154 in | 3.9 mm | 30 V | Surface Mount | |
 Vishay Dale | -55 °C | 150 °C | 8-SOIC | 950 pF | MOSFET (Metal Oxide) | 25 nC | 8 A | 3 V | 20 mOhm | 2.9 W | 2 | N-Channel | Dual | 0.154 in | 3.9 mm | 30 V | Surface Mount | |
Vishay Dale | -55 °C | 150 °C | 8-SOIC | MOSFET (Metal Oxide) | 11 nC | 5.7 A | 3 V | 22 mOhm | 1.1 W | 2 | N-Channel | Dual | 0.154 in | 3.9 mm | 30 V | Surface Mount | Logic Level Gate | |
Vishay Dale | -55 °C | 150 °C | 8-SOIC | MOSFET (Metal Oxide) | 11 nC | 5.7 A | 3 V | 22 mOhm | 1.1 W | 2 | N-Channel | Dual | 0.154 in | 3.9 mm | 30 V | Surface Mount | Logic Level Gate |