DMN3066L Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Diodes Inc DMN3066L-7	MOSFET (Metal Oxide)	SOT-23-3	67 mOhm	2.5 V 4.5 V	N-Channel	Surface Mount	12 V	SC-59 SOT-23-3 TO-236-3	1.5 V	30 V	4.1 nC	-55 °C	150 °C	3.6 A	810 mW

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certified facilities),pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.