Beta
⌘K
DIODE SIL CARB 600V 4A TO220-2-2
| Part | Capacitance @ Vr, F | Package / Case | Supplier Device Package | Technology | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 130 pF | TO-220-2 | PG-TO220-2-2 | SiC (Silicon Carbide) Schottky | 4 A | 0 ns | 600 V | Through Hole | No Recovery Time | 175 ░C | -55 C | 50 µA |