MBR120150 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 150V 60A 2TOWER
| Part | Voltage - DC Reverse (Vr) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Diode Pair Count | Diode Configuration | Current - Reverse Leakage | Current - Average Rectified (Io) (per Diode) | Mounting Type | Package / Case | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package Name | Technology | Voltage - Forward (Vf) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 150 V | 150 °C | -55 °C | 1 pair | Common Anode | 1 mA | 60 A | Chassis Mount | Twin Tower | 500 ns | 200 mA | Twin Tower | Schottky | 880 mV |
GeneSiC Semiconductor | 150 V | 150 °C | -55 °C | 1 pair | Common Anode | 1 mA | 60 A | Chassis Mount | Twin Tower | 500 ns | 200 mA | Twin Tower | Schottky | 880 mV |
GeneSiC Semiconductor | 150 V | 150 °C | -55 °C | 1 pair | Common Cathode | 1 mA | 60 A | Chassis Mount | Twin Tower | 500 ns | 200 mA | Twin Tower | Schottky | 880 mV |
GeneSiC Semiconductor | 150 V | 150 °C | -55 °C | 1 pair | Common Cathode | 1 mA | 60 A | Chassis Mount | Twin Tower | 500 ns | 200 mA | Twin Tower | Schottky | 880 mV |