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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Package Name | Package / Case | Gate Charge (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Rds On (Max) | Vgs (Max) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 271 pF | DFN2020MD-6 | 6-UDFN Exposed Pad | 10 nC | 1.9 W | 6.9 A | 2.5 V | 43 mOhm | 20 V | MOSFET (Metal Oxide) | 10 V | 4.5 V | Surface Mount | -55 °C | 175 °C | 30 V | N-Channel |