Catalog
4Mb 2.7-3.6V Parallel Flash
Key Features
• * Organized as 256K x16
• * Single Voltage Read and Write Operations – 2.7-3.6V
• * Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention
• * Low Power Consumption (typical values at 14 MHz)
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• + Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
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• * Sector-Erase Capability– Uniform 2 KWord sectors
• * Block-Erase Capability– Uniform 32 KWord blocks
• * Fast Read Access Time– 70 ns for SST39VF400A
• * Fast Erase and Word-Program
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• + Sector-Erase Time: 18 ms (typical)
• + Block-Erase Time: 18 ms (typical)
• + Chip-Erase Time: 70 ms (typical)
• + Word-Program Time: 14 µs (typical)
• + Chip Rewrite Time:4 seconds (typical) for SST39VF400A
• + Automatic Write Timing– Internal VPP Generation
• + End-of-Write Detection– Toggle Bit– Data# Polling
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• * JEDEC Standard– Flash EEPROM Pinouts and command sets
• * Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm)
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• + All non-Pb (lead-free) devices are RoHS compliant
Description
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