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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Package Name | Vgs (Max) | Gate Charge (Max) | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Package / Case | Rds On (Max) | Operating Temperature (Max) | Operating Temperature (Min) | Vgs(th) (Max) | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 30 V | TO-236AB | 20 V | 10 nC | Surface Mount | 830 mW | 1.9 A | 10 V | 5 V | 190 pF | SC-59 SOT-23-3 TO-236-3 | 120 mOhm | 150 °C | -65 °C | 2 V | N-Channel | MOSFET (Metal Oxide) |