FERROELECTRIC RAM (FRAM), 2 MBIT, 256K X 8BIT, SPI, 50 MHZ, 1.8 V TO 3.6 V SUPPLY, DIP-8
| Part | Memory Format | Access Time | Supplier Device Package | Memory Type | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization [custom] | Memory Organization [custom] | Package / Case | Package / Case | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Clock Frequency | Memory Size | Memory Interface | Package / Case [y] | Package / Case [x] | Qualification | Grade | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | FRAM | 8 ns | 8-PDIP | Non-Volatile | FRAM (Ferroelectric RAM) | 3.6 V | 1.8 V | 256 K | 8 | 0.3 in | 8-DIP | 7.62 mm | 85 °C | -40 °C | Through Hole | 50 MHz | 2 Gbit | SPI | |||||
Infineon Technologies | FRAM | 7 ns | 8-SOIC | Non-Volatile | FRAM (Ferroelectric RAM) | 3.6 V | 1.8 V | 256 K | 8 | 8-SOIC | 85 °C | -40 °C | Surface Mount | 108 MHz | 2 Gbit | QPI Quad I/O SPI | 5.3 mm | 0.209 " | |||||
Infineon Technologies | FRAM | 90 ns | 44-TSOP II | Non-Volatile | FRAM (Ferroelectric RAM) | 3.6 V | 2 V | 10.16 mm | 44-TSOP | 10.16 mm | 85 °C | -40 °C | Surface Mount | 2 Gbit | Parallel | AEC-Q100 | Automotive | 90 ns | |||||
Infineon Technologies | FRAM | 8 ns | 8-DFN (5x6) | Non-Volatile | FRAM (Ferroelectric RAM) | 3.6 V | 1.8 V | 256 K | 8 | 8-WDFN Exposed Pad | 85 °C | -40 °C | Surface Mount | 50 MHz | 2 Gbit | SPI | |||||||
Infineon Technologies | FRAM | 8 ns | 8-SOIC | Non-Volatile | FRAM (Ferroelectric RAM) | 3.6 V | 1.8 V | 256 K | 8 | 8-SOIC | 85 °C | -40 °C | Surface Mount | 50 MHz | 2 Gbit | SPI | 5.3 mm | 0.209 " | |||||
Infineon Technologies | FRAM | 8-SOIC | Non-Volatile | FRAM (Ferroelectric RAM) | 3.6 V | 1.8 V | 256 K | 8 | 8-SOIC | 125 °C | -40 °C | Surface Mount | 50 MHz | 2 Gbit | SPI | 5.3 mm | 0.209 " | AEC-Q100 | Automotive |