DIODE GEN PURP 50V 800MA SUB SMA
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Supplier Device Package | Speed | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 pF | 800 mA | 1.3 V | 5 µA | 150 ns | Surface Mount | 50 V | Standard | Sub SMA | 200 mA 500 ns | DO-219AB | ||
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 pF | 800 mA | 1.3 V | 5 µA | 150 ns | Surface Mount | 50 V | Standard | Sub SMA | 200 mA 500 ns | DO-219AB | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 pF | 1 A | 1.3 V | 5 µA | 150 ns | Surface Mount | 50 V | Standard | DO-214AC (SMA) | 200 mA 500 ns | DO-214AC SMA | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 pF | 800 mA | 1.3 V | 5 µA | 150 ns | Surface Mount | 50 V | Standard | Sub SMA | 200 mA 500 ns | DO-219AB | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 pF | 1 A | 1.3 V | 5 µA | 150 ns | Surface Mount | 50 V | Standard | DO-214AC (SMA) | 200 mA 500 ns | DO-214AC SMA | ||
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 10 pF | 1 A | 1.3 V | 5 µA | 150 ns | Surface Mount | 50 V | Standard | DO-214AC (SMA) | 200 mA 500 ns | DO-214AC SMA |