A2U8M12W3-FC Series

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100 A

Catalog

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100 A

Part
STMicroelectronics A2U8M12W3-FC
STMicroelectronics A2U8M12W3-FC

Catalog

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100 A

Key Features

• ACEPACK 2 power module:

- NH and NL: 750 V, 6 mΩ of typical RDS(on)each switch

- BH and BL: 1200 V, 9.5 mΩ of typical RDS(on)each switch

- 3 kVrms insulation

- Integrated NTC temperature sensor

- DC link capacitors between DC BUS and neutral

- AIN DBC improved thermal performance

- Press-fit contact pins

Description

This power module realizes a 3-level topology in an ACEPACK 2 module with NTC and capacitance, integrating the latest advances in silicon carbide MOSFETs from STMicroelectronics, represented by third generation technology. This modular solution is used to realize complex topologies with very high power density and efficiency requirements.