IC DRAM 256MBIT LVCMOS 54VFBGA
Part | Memory Format | Memory Size | Supplier Device Package | Memory Organization | Clock Frequency | Memory Interface | Memory Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Technology | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Write Cycle Time - Word, Page | Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W988D6FBGX7I TR | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 133 MHz | LVCMOS | ||||||||||
Winbond Electronics W988D6FBGX7E TR | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 133 MHz | Parallel | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -25 °C | 85 °C | 15 ns | 5.4 ns |
Winbond Electronics W988D6FBGX6I TR | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 166 MHz | Parallel | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -40 °C | 85 °C | 15 ns | 5.4 ns |
Winbond Electronics W988D6FBGX6E | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 166 MHz | Parallel | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -25 °C | 85 °C | 15 ns | 5.4 ns |
Winbond Electronics W988D6FBGX6E TR | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 166 MHz | Parallel | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -25 °C | 85 °C | 15 ns | 5.4 ns |
Winbond Electronics W988D6FBGX7E | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 133 MHz | Parallel | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -25 °C | 85 °C | 15 ns | 5.4 ns |
Winbond Electronics W988D6FBGX7I | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 133 MHz | LVCMOS | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -40 °C | 85 °C | 15 ns | 5.4 ns |
Winbond Electronics W988D6FBGX6I | DRAM | 256 Gbit | 54-VFBGA (8x9) | 16 M | 166 MHz | Parallel | Volatile | 1.95 V | 1.7 V | SDRAM - Mobile LPSDR | Surface Mount | 54-TFBGA | -40 °C | 85 °C | 15 ns | 5.4 ns |