MSCSM170HRM451AG-Module Series

1700V, 35 mOhm, SP1F, T-Type mSiC™ MOSFET Module

Catalog

1700V, 35 mOhm, SP1F, T-Type mSiC™ MOSFET Module

Part	Mounting Type	Operating Temperature (Max)	Operating Temperature (Min)	Technology	Package / Case	Power - Max (Tc)	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Rds On (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss) (Option 1)	Drain to Source Voltage (Vdss) (Option 2)	Configuration - Features	Configuration	Channel Count	Input Capacitance (Ciss) (Max)
Microchip Technology MSCSM170HRM451AG	Chassis Mount	175 °C	-40 °C	Silicon Carbide (SiC)	Module	319 W 395 W	89 A	64 A	2.8 V 3.2 V	31 mOhm 45 mOhm	178 nC 232 nC	1700 V	1200 V	Three Level Inverter	N-Channel	4	3300 pF

Catalog

1700V, 35 mOhm, SP1F, T-Type mSiC™ MOSFET Module

Description

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant