SSM6N68 Series

Catalog

MOSFET 2N-CH 30V 4A 6DFN

Part	FET Feature	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package
Toshiba Semiconductor and Storage SSM6N68NU,LF	1.8 V	Logic Level Gate	129 pF	2 N-Channel (Dual)	150 °C	Surface Mount	1.8 nC	MOSFET (Metal Oxide)	4 A	2 W	1 V	30 V	84 mOhm	6-µDFN (2x2)