DMG2305UXQ Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Package / Case	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Qualification	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMG2305UXQ-13	20 V	8 V	Surface Mount	900 mV	SOT-23-3	P-Channel	10.2 nC	-55 °C	150 °C	808 pF	Automotive	SC-59 SOT-23-3 TO-236-3	1.4 W	MOSFET (Metal Oxide)	52 mOhm	4.2 A	AEC-Q101	1.8 V 4.5 V

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.