R1EV58064 Series

EEPROM

Manufacturer: Renesas Electronics Corporation

Catalog

EEPROM

Part	Package Name	Package Width	Package Length	Write Cycle Time - Word	Write Cycle Time - Page	Memory Interface (Type)	Memory Format	Mounting Type	Memory Depth	Memory Width	Memory Size	Memory Type	Operating Temperature (Max)	Operating Temperature (Min)	Technology	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Access Time
Renesas Electronics Corporation R1EV58064BSCRBI#B2	28-SOIC 28-SOP	8.4 mm	0.33 in	10 ms	10 ms	Parallel	EEPROM	Surface Mount	8 K	8 bit	8 KB	Non-Volatile	85 °C	-40 °C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BDANBI#B2	28-DIP	15.24 mm	0.6 in	10 ms	10 ms	Parallel	EEPROM	Through Hole	8 K	8 bit	8 KB	Non-Volatile	85 °C	-40 °C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BTCNBI#B2	28-TSOP I 28-TSSOP	11.8 mm	0.465 in	10 ms	10 ms	Parallel	EEPROM	Surface Mount	8 K	8 bit	8 KB	Non-Volatile	85 °C	-40 °C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BDARBI#B2	28-DIP	15.24 mm	0.6 in	10 ms	10 ms	Parallel	EEPROM	Through Hole	8 K	8 bit	8 KB	Non-Volatile	85 °C	-40 °C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BTCRBI#B2	28-TSOP I 28-TSSOP	11.8 mm	0.465 in	10 ms	10 ms	Parallel	EEPROM	Surface Mount	8 K	8 bit	8 KB	Non-Volatile	85 °C	-40 °C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BSCNBI#B2	28-SOIC 28-SOP	8.4 mm	0.33 in	10 ms	10 ms	Parallel	EEPROM	Surface Mount	8 K	8 bit	8 KB	Non-Volatile	85 °C	-40 °C	EEPROM	5.5 V	2.7 V	100 ns

Catalog

EEPROM

Description

Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.