IXYH30N120B4 Series

Disc IGBT XPT-GenX4 TO-247AD

Catalog

Disc IGBT XPT-GenX4 TO-247AD

Part	Vce(on) (Max)	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Td (off) @ 25°C	Td (on) @ 25°C	Operating Temperature (Min)	Operating Temperature (Max)	IGBT Type	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Test Condition Voltage (Secondary)	Input Type	Current - Collector (Ic) (Max)	Package Name	Package / Case	Switching Energy (On)	Switching Energy (Off)	Power - Max	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Mounting Type
LITTELFUSE IXYH30N120B4	2.1 V	1200 V	58 nC	245 ns	20 ns	-55 °C	175 °C	PT	960 V	5 Ohm	25 A	15 V	Standard	100 A	TO-247 (IXYH)	TO-247-3	4.4 mJ	2.6 mJ	500 VA	60 ns	174 A	Through Hole

Catalog

Disc IGBT XPT-GenX4 TO-247AD

Description

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements