GPA805 Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC
| Part | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Capacitance | Package Name | Voltage - Forward (Vf) (Max) | Qualification | Grade | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Current - Average Rectified (Io) | Package / Case | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 50 pF | TO-220AC | 1.1 V 1.1 V | AEC-Q101 | Automotive | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 8 A | TO-220-2 | Through Hole | 600 V | 5 µA | Standard |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 50 pF | TO-220AC | 1.1 V 1.1 V | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 8 A | TO-220-2 | Through Hole | 600 V | 5 µA | Standard |