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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Technology | Package Name | Power Dissipation (Max) | Vgs(th) (Max) | Vgs (Max) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Rds On (Max) | Input Capacitance (Ciss) (Max) | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4.8 A | MOSFET (Metal Oxide) | 6-TSOP | 4.46 W 530 mW | 900 mV | 8 V | SC-74 SOT-457 | -55 °C | 150 °C | 4.5 V | 1.5 V | Surface Mount | 36 mOhm | 558 pF | N-Channel | 20 V | 9 nC | ||
Nexperia USA Inc. | 5.3 A | MOSFET (Metal Oxide) | 6-TSOP | 6.25 W 560 mW | 1.25 V | 12 V | SC-74 SOT-457 | -55 °C | 150 °C | 4.5 V | 2.5 V | Surface Mount | 34 mOhm | 1465 pF | P-Channel | 20 V | 17 nC | ||
 Nexperia USA Inc. | 5.2 A | MOSFET (Metal Oxide) | 6-TSOP | 7.5 W 660 mW | 1.3 V | 12 V | SC-74 SOT-457 | -55 °C | 175 °C | 8 V | 2.5 V | Surface Mount | 33 mOhm | 1039 pF | P-Channel | 20 V | 16 nC | Automotive | AEC-Q101 |