1200V mSiC™ Schottky Barrier Diodes (SBDs)
1200V mSiC™ Schottky Barrier Diodes (SBDs)
| Part | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Package Name | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Power Dissipation (Max) | Gate Charge (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Drain to Source Voltage (Vdss) | Rds On (Max) | FET Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Current - Reverse Leakage | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Capacitance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 131 A | 4500 pF | TO-247-3 | 2.4 V | -55 °C | 175 °C | Through Hole | 20 V | TO-247-3 | SiCFET (Silicon Carbide) | 400 W | 215 nC | -10 V | 25 V | 700 V | 19 mOhm | N-Channel | |||||||||||
 Microchip Technology | TO-220-2 | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | 175 °C | -55 °C | 36 A | 1.8 V | 200 µA | 500 mA | No Recovery Time | 500 mA 500 mA | 0 ns | 1200 V | 906 pF | |||||||||||||
 Microchip Technology | TO-247 | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | 15 A | 1.5 V | 500 mA | No Recovery Time | 500 mA 500 mA | 0 ns | 1200 V |