MPQ18021 Series
Manufacturer: Monolithic Power Systems Inc.
IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Gate Type | Number of Drivers | Package Length | Package Name | Package Width | Gate Channel | Mounting Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Input Type | Driven Configuration | Operating Temperature (Max) | Operating Temperature (Min) | Channel Type | High Side Voltage - Max (Bootstrap) | Fall Time (Typ) | Rise Time (Typ) | Current - Peak Output (Sink) | Current - Peak Output (Source) | Logic Voltage - VIL | Logic Voltage - VIH | Package Features | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Monolithic Power Systems Inc. | MOSFET N-Channel MOSFET | 2 | 0.154 in | 8-SOIC | 3.9 mm | N-Channel | Surface Mount | 9 VDC | 18 V | Non-Inverting | Half-Bridge | 125 °C | -40 °C | Independent | 115 V | 9 ns | 12 ns | 2.5 A | 2.5 A | 1 V | 2.4 V | |||
Monolithic Power Systems Inc. | N-Channel MOSFET | 2 | 0.154 in | 8-SOIC 8-SOICE | 3.9 mm | Surface Mount | 9 VDC | 18 V | Non-Inverting | Half-Bridge | 125 °C | -40 °C | Independent | 115 V | 9 ns | 12 ns | 2.5 A | 2.5 A | 1 V | 2.4 V | Exposed Pad | Automotive | AEC-Q100 | |
Monolithic Power Systems Inc. | MOSFET N-Channel MOSFET | 2 | 0.154 in | 8-SOIC | 3.9 mm | N-Channel | Surface Mount | 9 VDC | 18 V | Non-Inverting | Half-Bridge | 125 °C | -40 °C | Independent | 115 V | 9 ns | 12 ns | 2.5 A | 2.5 A | 1 V | 2.4 V | |||
Monolithic Power Systems Inc. | MOSFET N-Channel MOSFET | 2 | 0.154 in | 8-SOIC 8-SOICE | 3.9 mm | N-Channel | Surface Mount | 9 VDC | 18 V | Non-Inverting | Half-Bridge | 125 °C | -40 °C | Independent | 115 V | 9 ns | 12 ns | 2.5 A | 2.5 A | 1 V | 2.4 V | Exposed Pad | Automotive | AEC-Q100 |