MBR12035 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 35V 120A 2TOWER
| Part | Voltage - Forward (Vf) (Max) | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Current - Reverse Leakage | Current - Average Rectified (Io) (per Diode) | Package / Case | Diode Pair Count | Diode Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 500 ns | 200 mA | 150 °C | -55 °C | Twin Tower | 3 mA | 120 A | Twin Tower | 1 pair | Common Cathode | Schottky |
GeneSiC Semiconductor | ||||||||||||||
GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 500 ns | 200 mA | Twin Tower | 3 mA | 120 A | Twin Tower | 1 pair | Common Anode | Schottky | ||
GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 500 ns | 200 mA | 150 °C | -55 °C | Twin Tower | 3 mA | 120 A | Twin Tower | 1 pair | Common Anode | Schottky |
GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 500 ns | 200 mA | 150 °C | -55 °C | Twin Tower | 3 mA | 120 A | Twin Tower | 1 pair | Common Cathode | Schottky |