TJ30S06 Series

Catalog

MOSFET P-CH 60V 30A DPAK

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Mounting Type
Toshiba Semiconductor and Storage TJ30S06M3L,LXHQ	175 °C	30 A	21.8 mOhm	68 W	DPAK+	3 V	-20 V	10 V	60 V	3950 pF	80 nC	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	MOSFET (Metal Oxide)	Surface Mount
Toshiba Semiconductor and Storage TJ30S06M3L(T6L1,NQ	175 °C	30 A	21.8 mOhm	68 W	DPAK+	3 V	-20 V	10 V	60 V	3950 pF	80 nC	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	MOSFET (Metal Oxide)	Surface Mount