TLP628 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

TR COUPLER; DIP4 WIDE CREEPAGE;

Part	Operating Temperature (Max)	Operating Temperature (Min)	Number of Channels	Turn On Time (Typ)	Turn Off Time (Typ)	Output Type	Package Width	Package Name	Package Length	Input Type	Current - Output / Channel	Current - DC Forward (If) (Max)	Current Transfer Ratio (Max)	Voltage - Output (Max)	Vce Saturation (Max)	Fall Time (Typ)	Rise Time (Typ)	Voltage - Isolation	Mounting Type	Current Transfer Ratio (Min)	Voltage - Forward (Vf) (Typ)	Package / Case
Toshiba Semiconductor and Storage TLP628MF(GB,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor	10.16 mm	4-DIP	10.16 mm	DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Through Hole	100 %	1.25 V
Toshiba Semiconductor and Storage TLP628M(GB-TP5,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor		4-SMD		DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Surface Mount	100 %	1.25 V	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP628M(LF1,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor	7.62 mm	4-SMD	0.3 in	DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Surface Mount	50 %	1.25 V
Toshiba Semiconductor and Storage TLP628M(TP5,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor		4-SMD		DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Surface Mount	50 %	1.25 V	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP628M(GB-LF5,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor		4-SMD		DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Surface Mount	100 %	1.25 V	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP628M(GB,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor	7.62 mm	4-DIP	0.3 in	DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Through Hole	100 %	1.25 V
Toshiba Semiconductor and Storage TLP628M(E	125 °C	-55 °C	1	10 µs	10 µs	Transistor	7.62 mm	4-DIP	0.3 in	DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Through Hole	50 %	1.25 V
Toshiba Semiconductor and Storage TLP628M(GB-TP1,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor	7.62 mm	4-SMD	0.3 in	DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Surface Mount	100 %	1.25 V
Toshiba Semiconductor and Storage TLP628M(LF5,E	125 °C	-55 °C	1	10 µs	10 µs	Transistor		4-SMD		DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Surface Mount	50 %	1.25 V	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP628MF(E	125 °C	-55 °C	1	10 µs	10 µs	Transistor	10.16 mm	4-DIP	10.16 mm	DC	50 mA	50 mA	600 %	350 V	400 mV	10 µs	5.5 µs	5000 Vrms	Through Hole	50 %	1.25 V