RES 249 OHM 5W 1% WW AXIAL
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power (Watts) | Temperature Coefficient | Supplier Device Package | Package / Case | Tolerance | Resistance | Size / Dimension [diameter] | Size / Dimension [x] | Size / Dimension [x] | Size / Dimension [diameter] | Composition | Number of Terminations | Failure Rate | Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 20 ppm/°C | Axial | Axial | 1 % | 249 Ohms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | S (0.001%) | |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 20 ppm/°C | Axial | Axial | 1 % | 2.37 kOhms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 50 ppm/°C | Axial | Axial | 1 % | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | ||
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 50 ppm/°C | Axial | Axial | 1 % | 1.78 Ohms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 30 ppm/°C | Axial | Axial | 1 % | 48.7 Ohms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | S (0.001%) | |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 20 ppm/°C | Axial | Axial | 1 % | 12.1 kOhms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 20 ppm/°C | Axial | Axial | 1 % | 562 Ohms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | Military Moisture Resistant Non-Inductive |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 20 ppm/°C | Axial | Axial | 1 % | 249 Ohms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | Military Moisture Resistant Non-Inductive |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 30 ppm/°C | Axial | Axial | 1 % | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | R (0.01%) | Military Moisture Resistant Non-Inductive | |
Vishay General Semiconductor - Diodes Division | -55 °C | 250 °C | 5 W | 400 ppm/°C | Axial | Axial | 1 % | 1 Ohms | 0.312 in | 22.23 mm | 0.875 in | 7.92 mm | Wirewound | 2 | M (1%) |